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PURPOSE
Designed for use in ultra- wideband receiving and transmitting microwave modules.
APPLICATION
FEATURES
SPECIFICATION
|
Parameter Description |
Norm |
| Frequency range, GHz | 1-12 |
| Setting range of the attenuation coefficient , dB, min | 15,5 |
| The initial loss, dB, max | 4 |
| Step of the installation of the attenuation coefficient, dB, max | 0,5 |
| Rated input power, W, min | 0,1 |
| The unevenness of amplitude-frequency characteristics, dB, max |
1,0 |
| Nonidentity of the amplitude-frequency characteristics, dB, max |
1,0 |
| Nonidentity of the phase-frequency characteristics, degree, max |
15 |
| Accuracy of attenuation coefficient, dB, max | 0,5 |
| VSWR of input, output, max | 2 |
DESCRIPTION
Attenuators are made of monolithic technology on the structures of gallium arsenide. The active element of the attenuator: a field effect transistor with a gate Schottky, gate length is 0,5 microns.
