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PURPOSE
The use of transmitting sealed microwave modules as a power amplifier.
APPLICATION
FEATURES
Integral design, microstrip construction, wide range frequency.
SPECIFICATION
|
Parameter Description |
Norm |
| Frequency range, GHz, not less than | 30-36 |
| Gain, dB, not less than | 12 |
| VSWR (voltage standing-wave ratio) input/output, not more than | 2 |
| Output power dBm, not less than | 20 |
DESCRIPTION
The power amplifier is performed by the processing rate of 0.25 μm, DpHEMT-heterostructure GaAs. Earthing points are displayed on the back side of the substrate through the openings in the crystal of gallium arsenide, which can significantly reduce the parasitic inductance and obtain wide bandwidth of microwave signal at high gain. The power amplifier is distributed in integrated-circuit form.
