JSC Minsk Research Institute of Radiomaterials
Power amplifier 9-10 GHz
PURPOSE
Radar, radio monitoring, radio electronic devices, radio measuring equipment.
APPLICATION
- Radiolocation
- Radiomonitoring
- Radio countermeasures facilities
- Radio-measuring devices
Monolithic integrated design, microstrip design, wide frequency range, high efficiency.
SPECIFICATION
|
Parameter Description |
Norm |
| Frequency range, GHz, not less than | 9-10 |
| Gain, dB, Not less than | 14 |
|
The non-uniformity of gain in the operating range of input frequencies dB, not more than |
1 |
| Power output at compression gain on 1 dB, dBm, not less than | 31 |
|
VSWR output operating frequency range in the mode "On", not more than |
2 |
DESCRIPTION
The amplifier is made in monolithic technology on the structures of gallium arsenide. Active amplifier element: field-effect transistor with Schottky-barrier gate length is 0, 25 mic. Earthing points are displayed on the back side of the substrate through the openings in the crystal of gallium arsenide, which can significantly reduce the parasitic inductance and obtain a wide bandwidth of microwave signal at high gain.
