JSC Minsk Research Institute of Radiomaterials
Amplifiers UK 2 6106, UK 4 6106, UK 8 6106, UK 6106
PURPOSE
Designed to enhance the small electric microwave signals in the frequency range 0,75-12 GHz in the input circuits of receiving equipment and circuits of gain heterodyne signal frequency synthesizers.
APPLICATION
- Radar
- Radiomonitoring
- Means RES
- radio-measuring equipment
FEATURES
- Integral performance
- Microstrip design
- Wide frequency range
- Low noises level
SPECIFICATION
| Parameter Description | UK 2 | UK 4 | UK 8 | UK 12 |
| Frequency range, GHz | 0,75...2 | 2...4 | 4...8 | 8...12 |
| Gain, dB, min | 17±1 | 17±1 | 17±1,5 | 17±1,5 |
| Noise figure, dB, max | 3,0 | 3,5 | 4,5 | 4,5 |
| Supply voltage, V | 6 - 9 | 6 - 9 | 6 - 9 | 6 - 9 |
| Current consumption, mA, max | 45 | 45 | 45 | 40 |
| Temperature range, °С | -60...+70 | -60...+70 | -60...+70 | -60...+70 |
| Output power, (for 1 dB compression), dBm | 10 | 10 | 10 | 10 |
DESCRIPTION
Amplifiers are made on monolithic technology on the structures of gallium arsenide. The active element of the amplifier: MOSFET with Schottky gate, the gate length is 0.5 microns. Grounding points displayed on the reverse side of the substrate through the holes in gallium arsenide, which significantly reduce the parasitic inductance and a wide bandwidth at high gain.
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