OJSC “MINSK RESEARCH INSTITUTE OF RADIOMATERIALS”
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GaAs wafers
GaAs wafers

MRIOR manufactures GaAs wafers on its own production site.

GaAs wafers are made according to “epi-ready” technology using technologies and chemical compositions of Fujimi corporation (Japan).

Application field: the manufacture of integrated microwave circuits, LEDs, IR emitters, including semiconductor lasers, satellite solar panels, etc.

 
The power amplifier 30-36 GHz
The power amplifier 30-36 GHz

The power amplifier 30-36 GHz is used as a power amplifier transmitting a sealed microwave modules.
 
The power amplifier 9-10 GHz
The power amplifier 9-10 GHz

Application field: Radar, radio monitoring, radio electronic devices, radio measuring equipment.

 
Low noise amplifier (LNA)
Low noise amplifier (LNA)

Low noise amplifier is used to enhance small electric microwave signals in the input circuits of receiving devices and circuits gain heterodyne signals of the frequency synthesizer in the pressurized modules.
 

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86-2, Lietenanta Kizhevatova st. 
Minsk 220024
Republic of Belarus
Phone: +375 17 398-11-06
Fax: +375 17 398-28-65
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