Designed to enhance the small electric microwave signals in the frequency range 0,75-12 GHz in the input circuits of receiving equipment and circuits of gain heterodyne signal frequency synthesizers.

APPLICATION

· Radar

· radiomonitoring

· means RES

· radio-measuring equipment.

FEATURES

• Integral performance

• Microstrip design

• Wide frequency range

• Low noises level

SPECIFICATION

Parameter UK 2 UK 4 UK 8 UK 12
Frequency range, GHz............................................ 0,75...2 2...4 4...8 8...12
Gain, dB, min............................................................ 17±1 17±1 17±1,5 17±1,5
Noise figure, dB, max................................................. 3,0 3,5 4,5 4,5
Supply voltage, V.........................................................6 - 9 6 - 9 6 - 9 6 - 9
Current consumption, mA, max....................................45 45 4 5 40
Temperature range, °С........................................... -60...+70 -60...+70 -60...+70 -60...+70
Output power, (for 1 dB compression), dBm............... 10 10 10 10

DESCRIPTION

Amplifiers are made on monolithic technology on the structures of gallium arsenide. The active element of the amplifier: MOSFET with Schottky gate, the gate length is 0.5 microns. Grounding points displayed on the reverse side of the sub­strate through the holes in gallium arsenide, which significantly reduce the parasitic inductance and a wide bandwidth at high gain.


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