OJSC “MINSK RESEARCH INSTITUTE OF RADIOMATERIALS”
Low noise amplifier (LNA)
PURPOSE
Low noise amplifier is used to enhance small electric microwave signals in the input circuits of receiving devices and circuits gain heterodyne signals of the frequency synthesizer in the pressurized modules.
APPLICATIONRadar, radio monitoring, radio electronic devices, radio measuring equipment.
FEATURES
- Integrated-circuit form
- Multiple-stripe design
- Wide frequency band
- Low noise
SPECIFICATION
|
Parameter Description |
Norm |
| Frequency range, GHz, not less than | 9-10 |
| Gain, dB, not less than | 17 |
| The noise factor in the working frequency range, dB, not more than | 2,5 |
|
The power output level when compressing the gain by 1 dB, dBm, not less than |
10,0 |
| VSWR input/output, not more than | 2,0 |
DESCRIPTION
The amplifier is made in monolithic technology on the structures of gallium arsenide. Active amplifier element: field-effect transistor with Schottky-barrier gate length is 0, 25 mic. Earthing points are displayed on the back side of the substrate through the openings in the crystal of gallium arsenide, which can significantly reduce the parasitic inductance and obtain a wide bandwidth of microwave signal at high gain.