JSC Minsk Research Institute of Radiomaterials
Monolithically-integrated power amplifier PA 8 1107
PURPOSE
Designed for use as a preamplifier of microwave transmitting pressurized modules.
APPLICATION
- Radiolocation
- Radiomonitoring
- Means RES
- Radio-measuring equipment
FEATURES
- Integral performance
- Microstrip design
- Wide frequency range
- High efficiency
SPECIFICATION
|
Parameter Description |
Norm |
| Frequencies range, GHz | 1–8 |
| Amplification ratio in linear regime, dB (min operating frequency in band) | 8 |
| Output power at 1 dB gain reduction, mW, min | 100 |
| Output power at Pin = 50 mW, mW, min | 200 |
| Frequency ripple, dB, max | 1,5 |
| Input and output VSWR, max | 2.0 |
| Supply voltage (positive polarity), V | 6–8 |
| Supply voltage (negative polarity), V | 1,5 |
| Allowable input microwave power, mW | 300 |
DESCRIPTION
Amplifiers are manufactured using monolithic technology based on gallium arsenide structures. The active element is a MOSFET with a Schottky gate, gate length 0.5 μm. Grounding points are located on the reverse side of the substrate through vias in gallium arsenide.
Go back
