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Designed to switch electrical signal in the range of frequencies 0-12 GHz.
APPLICATION
Radiolocation, navigation, telecommunications, instrumentation equipment
FEATURES
Coordinated on the 50 ohm, integral performance, gallium arsenide technology
SPECIFICATION
Frequency range, GHz........................................ 0-12
Switching time, µs, no more……..................... 1
Loss of bandwidth, dB, no more.................... 3
Isolation between channels, dB, no less............. 30
The control voltage, V……………................. -5…0
Switching power, mW, no more………............. 50
Temperature range, °C…........................... - 40...+ 50
DESCRIPTION
The switch is made of monolithic technology on the structures of gallium arsenide. As the active elements field effect transistors are used with a gate length of 0.8 microns and a width of 250 microns. The switch has two identical channels, included one by one, which requires the submission of paraphase control voltage 0 V to the same channel and -5 V the second. The input and output terminals allow to connect the switch to the microstrip line impedance of 50 ohms. Also available without a housing.
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